Dr. Munaf Rahimo was elevated to a 2023 IEEE Fellow for contributions to high-voltage insulated gate bipolar transistors for grid applications. The Institute of Electrical and Electronics Engineers IEEE Fellow is a distinction reserved for select members whose exceptional accomplishments in any of the IEEE fields of interest are deemed fitting of this prestigious grade elevation.

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https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/fellows/2023-newly-elevated-fellows.pdf

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During his 30-year career working on power semiconductor devices, Dr. Rahimo pioneered and developed a wide range of robust and efficient power semiconductor devices.  At ABB Switzerland, he pioneered the SPT/SPT+ IGBT, the BIGT and the HPT IGCT where products based on these device concepts are employed globally in many power electronics applications including grid systems, industrial drive and railway traction and renewable converters. For example, the BIGT has enabled VSC based HVDC systems to reach power levels up to 3 GW with extremely low losses such as for the Dogger Bank off-shore wind farm in the UK. (https://www.hitachienergy.com/products-and-solutions/semiconductors/semiconductors-newsletter/world-s-most-powerful-press-pack-for-the-world-s-largest-offshore-wind-farm)

 

Due to his contributions, Dr. Rahimo became ABB Corporate Executive Engineer in 2012 which is the highest technical title in the company. Since 2018, he is a consultant at MTAL GmbH and has founded a startup mqSemi AG in Switzerland.

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Dr. Rahimo holds his B.Sc. (1990) in Electrical Engineering from Baghdad University in Iraq and his M.Sc. (1993) and Ph.D. (1996) from Staffordshire University in the UK. He also holds an M.B.A. (2006) in international business from the Swiss Business School in Zurich, Switzerland. He is also a Fellow at the IET and has published more than 200 papers and holds more than 50 US and 40 EP granted patents.

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